to the 2D@Grenoble mailing list to receive the newsletter.
- 09/06/16 - A critical thickness condition for graphene and other 2D materials
- A critical thickness analysis for dislocation formation in 2D lateral heterostructures is reported. The analysis applies to graphene, h-BN, and other 2D materials. We compare a fully atomistic approach to a continuum critical thickness theory, for the limiting cases of thin "films" on much thicker "substrates", and for cases in which the "film" and "substrate" are of comparable thickness -- also known as the compliant substrate case. By comparing atomistic and continuum formulations, we compute the effective dislocation core cutoff radii for graphene and h-BN, as well as the dislocation core energies. The work provides a comprehensive critical thickness analysis for 2D materials, and paves the way for defect-free growth of strained 2D lateral heterstructures. Phys. Rev. B 93, 214103, 2016
- 19/10/15 - Chair of Excellence from LABEX Lanef granted to Prof. Athanasios Dimoulas (NCSR Demokritos)
- Prof. Dimoulas will spend research stays in Grenoble between 2016 and 2018 working on "Two-dimensional transition metal dichalcogenide materials" (see examples of his research on this link) in close collaborations with colleagues from CEA-INAC and Institut Néel.
- 15/10/15 - Atomic-level birthmarks in 2D sand
- S. Mathur and co-workers reveal the mechanism for defect generation in silica, the most common constituent of sand and a key ingredient in catalysts and microelectronic devices, formed with the ultimate thinness of about 0.3 nm. Unlike bulk silica which displays various crystallographic structures, this ultra-thin form adopts a characteristic honeycomb atomic lattice reminiscent of that of other ultimately thin materials such as graphene. This similarity qualifies two-dimensional silica as a building block in multifunctional stacks of distinctive two-dimensional materials. Based on atomic scale-imaging with unprecedented resolution and simulations, a sequence is proposed which describes the atomic processes during the growth of silica onto a metallic substrate. During the sequence, collective atomic movements imposed by symmetries occur with few-nanometer-sized silica domains moving like the pieces of a sliding puzzle. The boundaries that patch these pieces together are line defects, which are found to be unavoidable birthmarks for silica. Phys. Rev. B 92, 161410 (2015)